Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 3: Micro & Nano Reliability

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity

Authors:J. Xu
Affilation:Peking University, CN
Pages:176 - 179
Keywords:FinFET device, process fluctuation, vertical nonuniformity, performance variation
Abstract:Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.
Characteristics Sensitivity of FinFET to Fin Vertical NonuniformityView PDF of paper
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