Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
 
Chapter 3: Micro & Nano Reliability
 

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Authors:X. Zhang
Affilation:Peking University, CN
Pages:172 - 175
Keywords:nanoscale DG-MOSFET, random dopant fluctuation, reliability
Abstract:The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.
ISBN:978-1-4398-7139-3
Pages:854
Hardcopy:$199.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map