 | Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 3: Micro & Nano Reliability |
Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance | |
| Authors: | X. Zhang |
| Affilation: | Peking University, CN |
| Pages: | 172 - 175 |
| Keywords: | nanoscale DG-MOSFET, random dopant fluctuation, reliability |
| Abstract: | The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation. |
| ISBN: | 978-1-4398-7139-3 |
| Pages: | 854 |
| Hardcopy: | $199.95 |
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