Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Micro & Nano Reliability Chapter 3

Three-dimensional Deformation Analysis of MEMS/NEMS by means of X-ray Computer-Tomography
J. Hammacher, M. Dost, W. Faust, L. Scheiter, R. Erb, B. Michel
Fraunhofer ENAS, DE

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions
N. Ashraf, D. Vasileska
Arizona State University, US

Reliability Analysis of Low Temperature Low Pressure Ag-Sinter Die Attach
R. Mrossko, H. Oppermann, B. Wunderle, T. Winkler, B. Michel
Berliner Nanotest und Design GmbH, DE

Fracture mechanical test methods for interface crack evaluation of electronic packages
J. Keller, I. Maus, H. Pape, B. Wunderle, B. Michel
AMIC Angewandte Micro-Messtechnik GmbH, DE

Automated test system for in-situ testing of reliability and aging behaviour of thermal interface materials
M. Abo Ras
Berliner Nanotest and Design GmbH, DE

Correlation of Microstructure and Tribological Properties of Dry Sliding Nanocrystalline Diamond Coatings
M. Wiora, N. Sadrifar, K. Brühne, P. Gluche, H.-J. Fecht
Ulm University, DE

FinFET reliability issue analysis by forward gated-diode method
Z. Liu
PKU HKUST Shenzhen Institution of IER., CN

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance
X. Zhang
Peking University, CN

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
J. Xu
Peking University, CN

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current
C. Zhang
Peking University, CN

Cryostructuration of latexes
I. Portnaya
Technion - Israel Institute of Technology, IL


ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95