The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 10: Compact Modeling
	The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes
Authors:	M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, A. Napieralski
Affilation:	Technical University of Lodz, PL
Pages:	796 - 799
Keywords:	SiC, PiN, Schottky diodes, SPICE, behavioral model
Abstract:	This paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic, as well as to very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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