Authors: M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, A. Napieralski
Affilation: Technical University of Lodz, Poland
Pages: 796 - 799
Keywords: SiC, PiN, Schottky diodes, SPICE, behavioral model
This paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic, as well as to very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.