Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 10: Compact Modeling
	Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
Authors:	H. Abebe, E. Cumberbatch
Affilation:	USC/ISI, US
Pages:	800 - 802
Keywords:	circuit simulation, compact device modeling, MOSFET, SPICE
Abstract:	We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with numerical results. The compact models are developed based on the graphene material physics using 1-D approximation for circuit simulation application.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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