Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 10: Compact Modeling

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

Authors:H. Abebe, E. Cumberbatch
Affilation:USC/ISI, US
Pages:800 - 802
Keywords:circuit simulation, compact device modeling, MOSFET, SPICE
Abstract:We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with numerical results. The compact models are developed based on the graphene material physics using 1-D approximation for circuit simulation application.
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