Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 10

A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics

Authors: L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong

Affilation: Massachusetts Institute of Technology, United States

Pages: 738 - 741

Keywords: carbon nanotube, transport model, quantum capacitance, electrostatic capacitance

Abstract:
In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential physics, such as the drain-induced-barrier-lowing (DIBL) and quantum capacitances, are captured with a reasonable accuracy compared with numerical simulations. The model facilitates fast circuit simulation and system optimization.


ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95

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