A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 10: Compact Modeling
	A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics
Authors:	L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong
Affilation:	Massachusetts Institute of Technology, US
Pages:	738 - 741
Keywords:	carbon nanotube, transport model, quantum capacitance, electrostatic capacitance
Abstract:	In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential physics, such as the drain-induced-barrier-lowing (DIBL) and quantum capacitances, are captured with a reasonable accuracy compared with numerical simulations. The model facilitates fast circuit simulation and system optimization.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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