A Phase-Change Random Access Memory Model for Circuit Simulation

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 10: Compact Modeling
	A Phase-Change Random Access Memory Model for Circuit Simulation
Authors:	M. Chan
Affilation:	HKUST, HK
Pages:	756 - 761
Keywords:	phase change memory, PCM
Abstract:	A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in the phase-change element crystallization process, the resulting resistance of the memory is dynamically calculated. Multi-level memory program and data retention can also be simulated using the proposed method. The model has been implemented in a circuit simulator by Verilog-A and has been verified by experimental data in the literature as well as numerical simulation
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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