Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 10

A Phase-Change Random Access Memory Model for Circuit Simulation

Authors: M. Chan

Affilation: HKUST, Hong Kong

Pages: 756 - 761

Keywords: phase change memory, PCM

Abstract:
A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in the phase-change element crystallization process, the resulting resistance of the memory is dynamically calculated. Multi-level memory program and data retention can also be simulated using the proposed method. The model has been implemented in a circuit simulator by Verilog-A and has been verified by experimental data in the literature as well as numerical simulation

A Phase-Change Random Access Memory Model for Circuit Simulation

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95