Authors: L. Zhang
Affilation: Peking University, China
Pages: 768 - 771
Keywords: MOSFET models, charge-sheet approximation, drain current model
In this paper we provide an insight into the drain current model for long-channel MOSFET devices. A new method to perform the integral of the rigorous Pao-Sah dual integral current is derived. From it, we demonstrate the error of the traditional charge sheet models in predicting the drain current compared with Pao-Sah’s dual integral model, also provide the reason that Brews’ charge sheet model fails to pass the self consistency tests reported previously. Three charge-sheet approximation models are tested in order to find a simple yet accurate drain current model for surface potential-based compact models.