Comparison and insight into long-channel MOSFET drain current models

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 10: Compact Modeling
	Comparison and insight into long-channel MOSFET drain current models
Authors:	L. Zhang
Affilation:	Peking University, CN
Pages:	768 - 771
Keywords:	MOSFET models, charge-sheet approximation, drain current model
Abstract:	In this paper we provide an insight into the drain current model for long-channel MOSFET devices. A new method to perform the integral of the rigorous Pao-Sah dual integral current is derived. From it, we demonstrate the error of the traditional charge sheet models in predicting the drain current compared with Pao-Sah’s dual integral model, also provide the reason that Brews’ charge sheet model fails to pass the self consistency tests reported previously. Three charge-sheet approximation models are tested in order to find a simple yet accurate drain current model for surface potential-based compact models.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

Order:	Mail/Fax Form
Special:	3 CD Set — 15% off with Free Shipping
Up