Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 10

Comparison and insight into long-channel MOSFET drain current models

Authors: L. Zhang

Affilation: Peking University, China

Pages: 768 - 771

Keywords: MOSFET models, charge-sheet approximation, drain current model

Abstract:
In this paper we provide an insight into the drain current model for long-channel MOSFET devices. A new method to perform the integral of the rigorous Pao-Sah dual integral current is derived. From it, we demonstrate the error of the traditional charge sheet models in predicting the drain current compared with Pao-Sah’s dual integral model, also provide the reason that Brews’ charge sheet model fails to pass the self consistency tests reported previously. Three charge-sheet approximation models are tested in order to find a simple yet accurate drain current model for surface potential-based compact models.

Comparison and insight into long-channel MOSFET drain current models

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95