Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 10

Charge Partition in Lateral Nonuniformly-Doped Transistor

Authors: J. Zhang, X. Zhou, G. Zhu and S. Lin

Affilation: Nanyang Technological University, Singapore

Pages: 784 - 787

Keywords: LDMOS, charge partition, charge model

In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. It can be demonstrated by simulation that the capacitance of the core channel with the step profile shows similar behaviors in the peaks. Based on the approximated step profile, a new physical charge partition method is derived and an explicit compact charge model that considers the nonuniform doping effect is formulated for the first time. The validity of the new partition scheme and the charge model is verified by comparison to the corresponding numerical simulation results. It is shown that the unusual peaks are captured nicely by the new LDMOS charge model.

Charge Partition in Lateral Nonuniformly-Doped Transistor

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95