Authors: M. Miura-Mattausch, M. Miyake, H. Kikuchihara, U. Feldmann, S. Amakawa, H.J. Mattausch
Affilation: Hiroshima University, Japan
Pages: 706 - 709
Keywords: surface potential, MOSFET family, bulk MOSFET, SOI-MOSFET, MG-MOSFET
Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. Another possible approach to facilitate the scaling is to use the third dimension, so that multi-gate MOSFET structures using this approach are becoming attractive. This paper addresses the importance of circuit-simulation models, which are based on device physics and are realized by solving the Poisson equation explicitly. The HiSIM-model family, which covers all structures from bulk MOSFETs to multi-gate MOSFETs, is presented as an example fulfilling these requirements.