Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nano Electronics & Photonics Chapter 1

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

Authors: H-W Cheng, Y-Y Chiu, Y-H Lee, Y. Li

Affilation: National Chiao Tung University, Taiwan

Pages: 30 - 33

Keywords: high-k/metal gate, work function fluctuation, grain number and position effect, bulk FinFET, 3D device quantum transport simulation

Abstract:
High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. In this study, based on experimentally calibrated 3D device simulation [7], WK fluctuation (WKF) of 16 nm TiN/HfO2 gate stack bulk FinFET devices is investigated. The effect of individual WKF in nanosized grain of metal gate on device’s characteristic are captured using localized WKF simulation technique [1], where the random position and number of nanosized metal grains are for the first time modeled and examined. Physical findings on WKF of HKMG devices are discussed accordingly

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95