Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nano Electronics & Photonics Chapter 1

Characteristics of co-doped device with hole and electron transport material

Authors: N.R. Park, G.Y. Ryu, D.H. Lim, S.J. Lee, Y.K. Kim, D.M. Shin

Affilation: Hong-ik University, Korea

Pages: 72 - 75

Keywords: co-doping, BDAT-P

Abstract:
We demonstrated green organic lighte-emittin diodes (OLEDs) improved by co-doped using hole transport material, N′-bis-(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) and electron transport material, bis(2-methyl-8-quninolinato)-4-phenylphenolate aluminum (Balq), into emitting layer. The co-doped materials impove charge blance by injecting hole and electron into emitting layer, so more hole and electron are combined and form much exciton which advance device performance. The device of co-doped hole transprot material, NPB, exhibits a luminance of 20620 cd/m2 and efficiency of 8.93 cd/A and quantum efficiency of 3.28 % which shows superior properties than others.

Characteristics of co-doped device with hole and electron transport material

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95