Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 1: Nano Electronics & Photonics

C-V Data and Geometry Parameters of Self-Assembled INAS/GAAS Quantum Rings

Authors:I. Filikhin, V.M. Suslov, B. Vlahovic
Affilation:North Carolina Central University, US
Pages:62 - 65
Keywords:quantum rings, single electron state, capacitance-gate-voltage
Abstract:In present work we focus on these problems and on the interpretation of the recent CV data given in W. Lei, C. Notthoff, A. Lorke, D. Reuter and A. D. Wieck (Appl. Phys. Lett. 96, 033111 (2010). We show that a variant of oscillator model used in this paper does not resolve known problem of the c-v measurements: the derived value of the energy-gate-voltage conversion coefficient (f=2) is in a disagreement with that obtained from CV experiments (f=8).
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