Authors: K. Wolff, F.F. Vidor, U. Hilleringmann
Affilation: University of Paderborn, Germany
Pages: 347 - 350
Keywords: inverter circuits, zinc oxide, nanoparticles, FET
Promising enhancement-load inverter cuircuits using bottom-gated ZnO nanoparticle thin-film transistors and a poly(4-vinylphenol) (PVP) dielectric are demonstrated. The deposition of the ZnO active layer is done by spin coating of a colloidal dispersion. Due to low process temperatures (<200°C), the presented device is suitable for plastic substrates and integration by printing techniques. The field-effect mobility and on/off-ratio of individual transistors are 3 • 10^-3 cm^2/(Vs) and 10^5, respectively, which is sufficient for low-cost/low-performance applications. However, the PVP causes hysteresis because of charge trapping. Although hysteresis is also observed for inverter circuits, the voltage transfer characteristics are reasonable with a gain in the range of 3 to 5.5 at a supply voltage between 10V and 15V. The static power dissipation density is approximately 2nW/um^2 and even less than in devices integrated by sputter deposition, ALD or PLD. Therefore, the proposed devices are promising for future nanoparticle-based logic circuits.