Authors: J. Hodkiewicz, M. Wall
Affilation: Thermo Fisher Scientific, United States
Pages: 745 - 746
Keywords: silicon crystalinity, Raman, characterization
Raman spectroscopy is highly sensitive to even slight changes in morphology of highly symmetrical, covalently bonded materials making it an ideal technique to characterize Silicon films. Furthermore, Raman spectroscopy is relatively insensitive to glass making the technique even more useful for the characterization of thin film solar devices. A prime example of how the technique can be useful in characterizing thin film solar devices is for distinguishing amorphous and crystalline Silicon. This application and others will be demonstrated. While it has reported before that Raman spectroscopy can be useful for distinguishing amorphous and crystalline Silicon, this poster will go further to discuss optimization of experimental parameters to provide those who are unfamiliar with the technique a comprehensive look at how the measurement is performed. It will then go further to show how small areas of surfaces can be imaged to understand the morphology of the Silicon across the device surface.