Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

MEMS & NEMS Devices Chapter 6

Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering

Authors: R. Dudde, D. Kaden, H.-J. Quenzer, B. Wagner

Affilation: Fraunhofer ISIT, Germany

Pages: 348 - 351

Keywords: PZT, thin film sputtering, MEMS actuators

Abstract:
Crack and void free polycrystalline PZT films in the range of 2 µm to 6 µm have been successfully deposited on silicon wafers using a novel high rate gas flow sputtering process. The development of a process for uniform deposition of high quality piezoelectric materials on wafer scale will drastically lower the costs of actuator integration into new MEMS devices. The sputtered PZT layers show a high dielectric constant Er of 2000 and a distinct ferroelectric hysteresis loop with a remnant polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm. Piezoelectric coefficients d33,f of 102 to 108pm/V have been determined using a standard aixACCT. A transverse piezoelectric module e31 = -10.9 C/m2 was measured.

Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95