Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 6: MEMS & NEMS Devices

One-chip MOS Structure for Temperature Flow Sensor

Authors:M. Husak, A. Boura, J. Jakovenko
Affilation:Czech Technical University in Prague, CZ
Pages:336 - 339
Keywords:CMOS, flow, weak inversion, CMOS design, thermal
Abstract:There is presented a one-chip MOS structure of anemometric sensor system in the paper. The geometric arrangement of temperature sensors allows measurement of temperature gradient. Temperature gradient allows computation of direction of air flow over the chip. The matrix of temperature sensors has been used for the design of sensitivity sensor. Various arrangements of MOS sensor structures have been designed. There is shown a different access to modeling and simulation of semiconductor structures. CoventorWare and CADENCE software tools have been used for simulation and modeling of sensor properties. A new way is discussed that describes temperature flow and measurement of velocity and direction. Temperature sensitivity structure - maximum values of sensitivity in dependence on operating temperature have been computed from the acquired values. These parameters have been used for the design of operating mode of the temperature matrix as a temperature semiconductor structure. Optimal heating temperature was found during simulations in CoventorWare program. A new approach to structure simulation and model creation was used. New circuit design of sensor temperature matrix was used. New results of sensitivity and resolution of sensor systems were reached. The working efforts are focused on the sensitivity, angle resolution and small power consumption.
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