Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser Irradiation

	Nanotech 2010 Vol. 2 Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 5: MEMS Fab: Design, Manufacture, Instrumentation
	Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser Irradiation
Authors:	A. Kiani, K. Venkatakrishnan, B. Tan
Affilation:	Ryerson University, CA
Pages:	276 - 279
Keywords:	maskless lithography, amorphous silicon, femtosecond laser
Abstract:	In this research, we reported a maskless lithography method by a combination of laser amorphization of silicon and wet alkaline etching. This technique can lead to a promising solution for maskless lithography because in comparison to the previous techniques, it involves less processing steps and requires simple equipment configuration. Scanning Electron Microscope (SEM), a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy analyses were used to evaluate the quality of amorphous layer and the etching process.
ISBN:	978-1-4398-3402-2
Pages:	862
Hardcopy:	$189.95

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