Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
 
Chapter 5: MEMS Fab: Design, Manufacture, Instrumentation
 

Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser Irradiation

Authors:A. Kiani, K. Venkatakrishnan, B. Tan
Affilation:Ryerson University, CA
Pages:276 - 279
Keywords:maskless lithography, amorphous silicon, femtosecond laser
Abstract:In this research, we reported a maskless lithography method by a combination of laser amorphization of silicon and wet alkaline etching. This technique can lead to a promising solution for maskless lithography because in comparison to the previous techniques, it involves less processing steps and requires simple equipment configuration. Scanning Electron Microscope (SEM), a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy analyses were used to evaluate the quality of amorphous layer and the etching process.
Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser IrradiationView PDF of paper
ISBN:978-1-4398-3402-2
Pages:862
Hardcopy:$189.95
 
Order:Mail/Fax Form
Up
© 2015 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map