Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 4: NanoFab: Manufacture, Instrumentation

Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

Authors:S. Lewis, D. Jeanmaire, V. Haynes, L. Piccirillo
Affilation:The University of Manchester, UK
Pages:195 - 198
Keywords:high aspect ratio, electron beam resist, lithography
Abstract:The performance of a new electron beam resist called SM20L-15 for use in electron beam lithography has been investigated. It was found that the clearing dose of this resist was 1025uC/cm2. The result is that 200nm features were fabricated, producing an aspect ratio of 10:1, therefore, the proximity effects commonly seen in electron beam lithography were considerably reduced.
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