Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

NanoFab: Manufacture, Instrumentation Chapter 4

Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

Authors: S. Lewis, D. Jeanmaire, V. Haynes, L. Piccirillo

Affilation: The University of Manchester, United Kingdom

Pages: 195 - 198

Keywords: high aspect ratio, electron beam resist, lithography

Abstract:
The performance of a new electron beam resist called SM20L-15 for use in electron beam lithography has been investigated. It was found that the clearing dose of this resist was 1025uC/cm2. The result is that 200nm features were fabricated, producing an aspect ratio of 10:1, therefore, the proximity effects commonly seen in electron beam lithography were considerably reduced.


ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95

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