Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

	Nanotech 2010 Vol. 2 Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 4: NanoFab: Manufacture, Instrumentation
	Characterization of an ultra high aspect ratio electron beam resist for nano-lithography
Authors:	S. Lewis, D. Jeanmaire, V. Haynes, L. Piccirillo
Affilation:	The University of Manchester, UK
Pages:	195 - 198
Keywords:	high aspect ratio, electron beam resist, lithography
Abstract:	The performance of a new electron beam resist called SM20L-15 for use in electron beam lithography has been investigated. It was found that the clearing dose of this resist was 1025uC/cm2. The result is that 200nm features were fabricated, producing an aspect ratio of 10:1, therefore, the proximity effects commonly seen in electron beam lithography were considerably reduced.
ISBN:	978-1-4398-3402-2
Pages:	862
Hardcopy:	$189.95

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