Authors: K. Kumar, E.H. Yang
Affilation: Stevens Institute of Technology, United States
Pages: 199 - 201
Keywords: graphene, atomic force microscope, oxidation lithography
In this work, we study Atomic Force Microscope local oxidation lithography to precisely fabricate nanometer-scale structures from graphene, a recently discovered material with exceptional electrical properties. We have systematically studied oxidation parameters (electric field, humidity, setpoint, tip speed, etc) with relation to oxidized feature size to determine the optimal conditions for less than 50 nm pattern line width. Using this optimized technique, we have oxidized nanometer sized features on single and few layer graphene and drawn insulating patterns on highly ordered pyrolyzed graphite. Forthcoming experiments include the patterning of less than 20 nm features on single-layer graphene to create quantum dots for electron transport studies.