MOCVD Preparation and photoluminiscence of ZnS nanowires

	Nanotech 2010 Vol. 2 Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 2: Nanostructured Materials & Devices
	MOCVD Preparation and photoluminiscence of ZnS nanowires
Authors:	J.M. Juarez, F. Juarez
Affilation:	INSTITUTO POLITECNICO NACIONAL, MX
Pages:	115 - 117
Keywords:	ZnS, MOCVD, nanowires
Abstract:	In this communication, we report a facile solution route to synthesize single crystalline wurtzite ZnS nanowires at low temperature (170 °C) using MOCVD system. Observations on the microstructure of the as-synthesized ZnS by high-resolution electron microscopy (HREM) and X-ray diffraction (XRD) show a high quality in the single crystal. Optical properties of as-prepared ZnS nanowires were also investigated by measuring Raman and photoluminescence (PL) spectra. In this letter, we show a simple and effective process by which very high quality single crystalline wurtzite ZnS nanowires are grown along [001] direction with strong ultra-violet (UV) emission near 339 nm.
ISBN:	978-1-4398-3402-2
Pages:	862
Hardcopy:	$189.95

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