Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nanostructured Materials & Devices Chapter 2

MOCVD Preparation and photoluminiscence of ZnS nanowires

Authors: J.M. Juarez, F. Juarez

Affilation: INSTITUTO POLITECNICO NACIONAL, Mexico

Pages: 115 - 117

Keywords: ZnS, MOCVD, nanowires

Abstract:
In this communication, we report a facile solution route to synthesize single crystalline wurtzite ZnS nanowires at low temperature (170 °C) using MOCVD system. Observations on the microstructure of the as-synthesized ZnS by high-resolution electron microscopy (HREM) and X-ray diffraction (XRD) show a high quality in the single crystal. Optical properties of as-prepared ZnS nanowires were also investigated by measuring Raman and photoluminescence (PL) spectra. In this letter, we show a simple and effective process by which very high quality single crystalline wurtzite ZnS nanowires are grown along [001] direction with strong ultra-violet (UV) emission near 339 nm.

MOCVD Preparation and photoluminiscence of ZnS nanowires

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95