Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 11: Compact Modeling

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Authors:W. Feldman, E. Cumberbatch, H. Abebe
Affilation:USC/ISI, US
Pages:813 - 816
Keywords:circuit simulation, compact device modeling, MOSFET, SPICE
Abstract:Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive an improved approximation to the energy band levels in single-gate MOSFET’s. The exact analytical solution to Schrodinger’s equation is known for this type of potential. Asymptotic approximations to the wave functions are used to find accurate compact formulae for the exact energy levels. These formulae agree closely with exact numerical results (SCHRED) providing improvements over the energy band levels derived from Stern’s traditional triangular approximation to the potential.
Order:Mail/Fax Form
© 2015 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map