Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 11: Compact Modeling

Bias Dependence of Low Frequency Noise in 90nm CMOS

Authors:N. Mavredakis, A. Antonopoulos, M. Bucher
Affilation:Technical University of Crete, GR
Pages:805 - 808
Keywords:low frequency noise, carrier fluctuation, number fluctuation, charge model, CMOS
Abstract:The bias dependence of low frequency noise (LFN) is investigated with measurements in 90nm CMOS. A recent charge-based LFN model combining carrier and mobility fluctuation components is compared to data from multi-finger devices with a channel length of L=70nm. LFN in PMOS devices is higher than in NMOS for input referred noise; carrier number fluctuation model allows to well represent increased noise in strong inversion for either transistor type; the mobility fluctuation is significant only in deep weak inversion, and allows to represent the corresponding increase of noise. As a result, input referred noise shows a minimum in moderate inversion, increasing the attractiveness of moderate inversion design. The new model is implemented in the EKV3 MOS transistor compact model, and provides a good qualitative fit for both saturation and linear mode, from weak to strong inversion operation.
Bias Dependence of Low Frequency Noise in 90nm CMOSView PDF of paper
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