Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

Authors: J. Dura, S. Martinie, D. Munteanu, M.-A. Jaud, S. Barraud, J.L. Autran

Affilation: CEA-LETI Minatec, France

Pages: 801 - 804

Keywords: nanowire, quantum confinement, compact model

Abstract:
The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices with ultra-thin and short channels involving new physical phenomena such as silicon band structure variation. In this paper, we propose an analytical model of the threshold voltage in GAA Silicon NanoWire including quantum confinement, Short Channel Effects (SCE) and band structure effects. The model has been compared to numerical simulations (Schrödinger-Poisson (SP) solver for quantum effects and atomistic simulation for the band structure effects).

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95