 | Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 11: Compact Modeling |
A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs | |
| Authors: | B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah |
| Affilation: | CEA, LETI, MINATEC, FR |
| Pages: | 793 - 796 |
| Keywords: | device modeling, gate-all-around (GAA) MOSFET, short-channel effects (SCE) |
| Abstract: | A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface potential approach. Results regarding I-V characteristics, for short-channel transistors, are compared to numerical simulations and validate our method in all operating regions. |
| ISBN: | 978-1-4398-3402-2 |
| Pages: | 862 |
| Hardcopy: | $189.95 |
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