Authors: L. Chen, Y. Xu, L. Zhang, X. Zhou, W. Zhou, J. He
Affilation: Peking University, China
Pages: 777 - 780
Keywords: DG MOSFET, accumulation mode, potential solution
This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and electrons) into account. The solution provides a smooth potential prediction from subthreshold to strong accumulation regions. The solved potentials are verified by numerical results for various bias condition and different structure parameters. In order to model short channel effects like CLM and DIBL, a linear shift in flatband voltage using a fitting parameter is included. The developed potential solution provides a framework of a physically-based accumulation mode DG MOSFET compact model for circuit simulation.