Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Authors: H. Abebe, E. Cumberbatch, S. Uno, V. Tyree

Affilation: USC/ISI, United States

Pages: 773 - 776

Keywords: circuit simulation, compact device modeling, MOSFET, SPICE

Abstract:
The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation across the device is assumed. Our compact models are compared with the 2-D numerical data from Sentaurus and give excellent results.

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95