Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Authors: U. Monga, T.A. Fjeldly

Affilation: UniK/Norwegian University of Science and Technology, Norway

Pages: 769 - 772

Keywords: quantum modeling, ballistic transport, conformal mapping, FinFET, threshold voltage, nanoscale

Abstract:
A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s formalism. We have also shown that the constant-mobility model and ballistic model are inherently similar and differ only by different carrier velocities at the top of the barrier. The quantum threshold voltage is modeled by solving Poisson’s equation with the quantum charge density. We have shown that the classical treatment underestimates the threshold voltage.

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95