Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Authors: Z. Zhou, J. Zhang, X. Zhou, X. Lin, J. He

Affilation: Peking University, China

Pages: 753 - 756

Keywords: retrograde, non-charge-sheet, analytic

Abstract:
This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET are ultimately obtained. The analytical model is also compared with numerical simulation results, which demonstrates that the analytic current model is applicable to both the weak and strong inversion operations and to different geometry structures. Therefore, this proposed model provides a foundation to develop a complete non-charge-sheet retrograde doping model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect, et al.

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95