Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
 
Chapter 11: Compact Modeling
 

Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond

Authors:H. Wang, R. Williams, L. Wagner, J. Johnson, P. Hyde, S. Springer
Affilation:IBM, US
Pages:757 - 760
Keywords:SOI, MOSFET, gate induced drain leakage, floating body effect
Abstract:Gate Induced Drain Leakage (GIDL) current is one of the most important leakage components in Silicon-on-Insulator (SOI) MOSFET devices. The effect of GIDL current reported before mainly focused on device characteristics in the OFF-state or breakdown regime. Recently, the effect of body currents on SOI device hysteresis was analyzed with emphasis on impact ionization current. In this paper, we investigate and analyze the impact of GIDL current for devices in the active ON-state and its effect on history and ring delay results in 45nm PDSOI technology and beyond. Hardware data for GIDL current are presented. Simulation results from models with different GIDL components show significant differences in the resulting floating body potential and output characteristics for devices in ON-state, which affects both history and ring delay time. These results suggest that even for digital circuit simulations, GIDL current needs to be accurately included in optimizing the circuit for power and performance.
ISBN:978-1-4398-3402-2
Pages:862
Hardcopy:$189.95
 
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