Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 11: Compact Modeling

Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels

Authors:B.B. Jie, C-T. Sah
Affilation:Univesity of Florida, US
Pages:749 - 752
Keywords:BiFET, pure base, intrinsic Debye length, long- channel characteristics, short-channel correction
Abstract:Bipolar MOSFETs with a pure base and two MOS gates usually have electrically short channels compared with its intrinsic Debye length of about 25μm at room temperatures. This short channel effect was missed by all previous authors because they neglected the gradient of the longitudinal electrical field in their computations of the long-channel characteristics of the transistors. This paper evaluates the short channel contributions to the drain current, drain conductance and transconductance. The results show that long-channel electrical characteristics are still good approximations when the physical channel length is several hundred times shorter than the intrinsic Debye length (25μm/100=250nm) but the long channel electrical characteristics are substantially modified at 25nm.
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