Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Computational Methods, Simulation & Software Tools Chapter 10

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

Authors: J. Zhu, Z. Yan, Y. Wang, X. Lin, J. He

Affilation: Peking University, China

Pages: 713 - 716

Keywords: terahertz, magnetic, FETs, nonresonant, detection

Abstract:
Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is discussed and the corresponding influence on the nonresonant detection photoresponse is analyzed in detail. Based on the work before, the numerical tool has been modified by adding the influence of magnetic field, and the nonresonant photoresponse characteristics are investigated. The result of simulation has verified the theory, and the work mechanism of this influence has been revealed in this paper.

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95