Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
 
Chapter 10: Computational Methods, Simulation & Software Tools
 

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

Authors:P. Malik, R. Chaujar, M. Gupta, R.S. Gupta
Affilation:Semiconductor Devices Research Laboratory, IN
Pages:705 - 708
Keywords:ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET
Abstract:In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal Recessed Channel(TRC) MOSFET(Fig.1.). The influence of technology parameters such as negative junction depth (NJD), substrate doping, workfunction difference has also been investigated for the purposed design GME-TRC MOSFET. Simulation results reveal that GME-TRC MOSFET enhances the linearity performance in terms of figure of merit (FOM) metrics:VIP2, VIP3 and higher order transconductance coefficients: gm1, gm2, gm3, proving its efficacy for RFIC design and wireless application.
ISBN:978-1-4398-3402-2
Pages:862
Hardcopy:$189.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map