Malik P., Chajaur R., Gupta M., Gupta R.S., Gupta M., Gupta R.S.
Semiconductor Devices Research Laboratory, IN
Keywords: ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET
In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS and DEVEDIT. Further, the influence of technology parameter variations such as negative junction depth (NJD), substrate doping and workfunction difference has been investigated for the proposed GME-TRC MOSFET. The simulation study reveals that GME-TRC MOSFET exhibits superior performance in terms of cut-off frequency, maximum unilateral power gain (MUG), maximum available power gain (Gma) and intrinsic delay and thus the result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high speed logic and RF applications.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 701 - 704
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2