Authors: H.-M. Yeh, K.-S. Chen
Affilation: National Cheng-Kung University, Taiwan
Pages: 669 - 672
Keywords: CMP, CAD, contact stress, cellular automata, CA
This work briefly presents the basic theory, the development, and a primary demonstration of a device-level chemical-Mechanical Polishing (CMP) CAD module. By integrating the phenomenological material removing relation such as Preston’s equation, contact mechanics, finite element analysis, with a cellular automata environment, this CMP CAD is aimed to predict the rounding, dishing, and erosion effects commonly observed in modern copper CMP processes. Primary results indicate that this CAD can essentially catch the characteristics of polishing processes. Further modification of this CAD would enhance its accuracy for industrial applications.