Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Electronics & Photonics Chapter 1

Jet-printed Si nanowires for flexible backplane applications

Authors: W.S. Wong, S. Raychaudhuri, S. Sambandan, R. Lujan, R.A. Street

Affilation: Palo Alto Research Center, United States

Pages: 41 - 44

Keywords: nanowire, FET, inkjet

Abstract:
The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals and passivation layers. We also demonstrate the use of dielectrophoresis and inkjet printing to pattern and assemble active matrix display backplane arrays of Si NW FETs from a liquid suspension.

Jet-printed Si nanowires for flexible backplane applications

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95