Authors: W.S. Wong, S. Raychaudhuri, S. Sambandan, R. Lujan, R.A. Street
Affilation: Palo Alto Research Center, United States
Pages: 41 - 44
Keywords: nanowire, FET, inkjet
The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals and passivation layers. We also demonstrate the use of dielectrophoresis and inkjet printing to pattern and assemble active matrix display backplane arrays of Si NW FETs from a liquid suspension.