Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A.
Palo Alto Research Center, US
Keywords: FET, inkjet, nanowire
The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals and passivation layers. We also demonstrate the use of dielectrophoresis and inkjet printing to pattern and assemble active matrix display backplane arrays of Si NW FETs from a liquid suspension.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 41 - 44
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4398-3402-2