Authors: K-F Lee, M-H Han, I-S Lo, C-Y Yiu, Y. Li
Affilation: National Chiao Tung University, Taiwan
Pages: 65 - 68
Keywords: TFETs, current ratio, subthreshold slope
The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure design optimization for Si TFETs. We are currently extending this study to include more designing and material parameters for high-performance TFET devices in low power ICs.