Nano Science and Technology Institute
Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 1: Electronics & Photonics

Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

Authors:L. Forbes, M.Y. Louie
Affilation:Oregon State University, US
Pages:9 - 12
Keywords:texturing, silicon, near infrared, photodetectors
Abstract:When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared photons. This results in multiple internal reflections and light trapping. This paper describes a simple analysis technique and design considerations in the use of backside texturing to improve the near infrared(IR) response of silicon photodiodes, photodetectors, solar cells and imagers. A large enhancement in the near infrared responsivity of silicon photodetectors can be achieved.
Backside Nanoscale Texturing to Improve IR Response of Silicon PhotodetectorsView PDF of paper
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