Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

	Nanotech 2010 Vol. 2 Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 1: Electronics & Photonics
	Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors
Authors:	L. Forbes, M.Y. Louie
Affilation:	Oregon State University, US
Pages:	9 - 12
Keywords:	texturing, silicon, near infrared, photodetectors
Abstract:	When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared photons. This results in multiple internal reflections and light trapping. This paper describes a simple analysis technique and design considerations in the use of backside texturing to improve the near infrared(IR) response of silicon photodiodes, photodetectors, solar cells and imagers. A large enhancement in the near infrared responsivity of silicon photodetectors can be achieved.
ISBN:	978-1-4398-3402-2
Pages:	862
Hardcopy:	$189.95

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