Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

	Nanotech 2010 Vol. 1 Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites Chapter 3: Nanoparticle Synthesis & Applications
	Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications
Authors:	H. Grimm, N. Petermann, A. Gupta, H. Wiggers
Affilation:	University of Duisburg-Essen, DE
Pages:	410 - 412
Keywords:	silicon, germanium, doped, nanoparticles, synthesis, microwave, plasma, reactor
Abstract:	Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane with diborane (B2H6) and phosphine (PH3), respectively. Adjusting the fraction of the respective precursor in the gas phase is used to control the dopant concentration.
ISBN:	978-1-4398-3401-5
Pages:	976
Hardcopy:	$189.95

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