Nanotech 2010 Vol. 1
Nanotech 2010 Vol. 1
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites

Nanoparticle Synthesis & Applications Chapter 3

Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

Authors: H. Grimm, N. Petermann, A. Gupta, H. Wiggers

Affilation: University of Duisburg-Essen, Germany

Pages: 410 - 412

Keywords: silicon, germanium, doped, nanoparticles, synthesis, microwave, plasma, reactor

Abstract:
Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane with diborane (B2H6) and phosphine (PH3), respectively. Adjusting the fraction of the respective precursor in the gas phase is used to control the dopant concentration.

Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

ISBN: 978-1-4398-3401-5
Pages: 976
Hardcopy: $189.95