Authors: H. Grimm, N. Petermann, A. Gupta, H. Wiggers
Affilation: University of Duisburg-Essen, Germany
Pages: 410 - 412
Keywords: silicon, germanium, doped, nanoparticles, synthesis, microwave, plasma, reactor
Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane with diborane (B2H6) and phosphine (PH3), respectively. Adjusting the fraction of the respective precursor in the gas phase is used to control the dopant concentration.