Authors: J.S. Hammond, U. Givan, D. Paul, F. Patolsky
Affilation: Physical Electronics USA, United States
Pages: 21 - 24
Keywords: nanowire, SiGe, Auger electron spectroscopy
The lateral and depth distributions of the surface oxidation and the surface Phosphorous doping concentrations have been measured from an individual SixGe(1-x) 60 nm diameter nanowire with Auger Electron Spectroscopy combined with sputter ion depth profiling. The surface imaging spectroscopy characterization of the CVD-LVS grown nanowires interpret the conductivity measurements of the nanowires.