Authors: W.C. Ke, S.J. Lee, C.Y. Kao, W.K. Chen, W.C. Chou, W.H. Chang, W.J. Lin, Y.C. Cheng, T.C. Lee, J.C. Lin
Affilation: Yuan Ze University, Taiwan
Pages: 125 - 128
Keywords: InN nanodots, pulsed mode, PL
High density InN/GaN nanodots were successfully grown by pulsed mode (PM) metal organic chemical vapor deposition (MOCVD). InN nanodots density of up to ~5×1010 cm-2 at a growth temperature of 550 ℃ was achieved The higher diffusion activation energy (i.e. 2.5 eV) of In adatoms due to the high NH3 flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. A reduced quenching of the PL from the high density InN nanodots was also observed, implying superior emission properties for the PM method growth of InN nanodots.