Nanotech 2010 Vol. 1
Nanotech 2010 Vol. 1
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites

Nanoscale Materials Characterization Chapter 1

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Authors: W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige

Affilation: Groupe de Physique des Matériaux, France

Pages: 29 - 32

Keywords: dopant, nanowire, semiconductors, characterization, tools

Abstract:
The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.


ISBN: 978-1-4398-3401-5
Pages: 976
Hardcopy: $189.95

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