Nano Science and Technology Institute
Nanotech 2010 Vol. 1
Nanotech 2010 Vol. 1
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
Chapter 1: Nanoscale Materials Characterization

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Authors:W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Affilation:Groupe de Physique des Matériaux, FR
Pages:29 - 32
Keywords:dopant, nanowire, semiconductors, characterization, tools
Abstract:The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.
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