Nano Science and Technology Institute
Nanotech 2010 Vol. 1
Nanotech 2010 Vol. 1
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
 
Chapter 1: Nanoscale Materials Characterization
 

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Authors:W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Affilation:Groupe de Physique des Matériaux, FR
Pages:29 - 32
Keywords:dopant, nanowire, semiconductors, characterization, tools
Abstract:The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.
Atomic scale dopant detection in an individual silicon nanowire by atom probe tomographyView PDF of paper
ISBN:978-1-4398-3401-5
Pages:976
Hardcopy:$189.95
 
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