Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

	Nanotech 2010 Vol. 1 Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites Chapter 1: Nanoscale Materials Characterization
	Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography
Authors:	W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Affilation:	Groupe de Physique des Matériaux, FR
Pages:	29 - 32
Keywords:	dopant, nanowire, semiconductors, characterization, tools
Abstract:	The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.
ISBN:	978-1-4398-3401-5
Pages:	976
Hardcopy:	$189.95

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