Nanotech 2010 Vol. 1
Nanotech 2010 Vol. 1
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites

Nanoscale Materials Characterization Chapter 1

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Authors: W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige

Affilation: Groupe de Physique des Matériaux, France

Pages: 29 - 32

Keywords: dopant, nanowire, semiconductors, characterization, tools

Abstract:
The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

ISBN: 978-1-4398-3401-5
Pages: 976
Hardcopy: $189.95