Authors: H. Abebe, V. Tyree, N.S. Cockerham
Affilation: USC ISI/MOSIS, United States
Pages: 647 - 650
Keywords: device modeling, MOSFET, parameter extraction, SPICE
The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction and optimization strategy  is used as basis to extract the temperature dependent BSIM3v3.1 model parameters. The final extracted model parameters accuracy is evaluated by comparing simulations of a 31-stage ring oscillator with measured data.