Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling

Workshop on Compact Modeling Chapter 9

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

Authors: H. Abebe, V. Tyree, N.S. Cockerham

Affilation: USC ISI/MOSIS, United States

Pages: 647 - 650

Keywords: device modeling, MOSFET, parameter extraction, SPICE

Abstract:
The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction and optimization strategy [1] is used as basis to extract the temperature dependent BSIM3v3.1 model parameters. The final extracted model parameters accuracy is evaluated by comparing simulations of a 31-stage ring oscillator with measured data.

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

ISBN: 978-1-4398-1784-1
Pages: 694
Hardcopy: $179.95