Nano Science and Technology Institute
Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Chapter 9: Workshop on Compact Modeling

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Authors:C-Q Wei, Y-Z Xiong, X. Zhou
Affilation:Nanyang Technological University, SG
Pages:639 - 642
Keywords:1/f noise, noise model, FinFET, double gate
Abstract:1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the gates has been evaluated. This quantity is the main parameter needed to deduce the Hooge parameter αH in the subthreshold conduction. 1/f noise in n-channel double-gate FinFETs has been investigated. These transistors exhibit 1/f noise in agreement with Hooge’s theory when they are biased in weak inversion due to their volume inversion conduction behaviors.
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