1/f Noise Modeling at Low Temperature with the EKV3 Compact Model

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 9: Workshop on Compact Modeling
	1/f Noise Modeling at Low Temperature with the EKV3 Compact Model
Authors:	P. Martin, G. Ghibaudo
Affilation:	CEA, LETI, Minatec, FR
Pages:	636 - 638
Keywords:	MOSFET, flicker noise, low temperature, compact model, EKV3
Abstract:	Advanced compact models are mandatory for simulation of mixed analog-digital circuits working at low temperature (77-200 K). In this work, the 1/f noise model introduced in the EKV3 model is evaluated. This evaluation is performed on a dual gate oxide CMOS technology with 0.18 µm / 1.8 V and 0.35 µm / 3.3 V MOSFET transistors. Experimental results on low frequency noise at room temperature and at 77 K for both n-MOSFET and p-MOSFET are presented. The flicker noise model introduced in EKV3 allows to fit experimental data in a very wide range, from weak to strong inversion.
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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