Authors: D.A. Miller, M.E. Jacob, L. Forbes
Affilation: Oregon State University, United States
Pages: 632 - 635
Keywords: low frequency noise, random telegraph signals, RTS, MOSFET noise
At nanoscale device dimensions low frequency noise is dominated by one or more oxide traps capturing and emitting charge and generating large swings in the drain current or what is known as Random Telegraph Signal (RTS). Fluctuations in oxide trap and dopant distributions create wide variations in low frequency noise from otherwise identical devices. A compact low frequency noise model presented here accounts for the action of traps on percolating currents in deep submicron and sub-100nm MOS transistors.