Authors: Y.W. Heong, M.T. Ahmadi, J.E. Suseno, R. Ismail
Affilation: Universiti Teknologi Malaysia, Malaysia
Pages: 624 - 627
Keywords: strained silicon, carrier statistic, carrier velocity, two dimensional devices
Abstract In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac intergral that covers the carrier statistics to all degenerate level is studied and its limits are obtained. In the nondegenerate regime the results replicate Boltzmann statistic and its result is vary from degenerate regime. The Fermi energy with respect to the transformed band edge is a function of carrier concentration. Based on the Fermi – Dirac statistic, density of state the carrier concentration is obtained. Fermi energy is a function of temperature that independent of the carrier concentration in the nondegenrate regime. In strongly degenerate, the Fermi energy is a function of carrier concentration and is independent of temperature. The limitations on carrier drift due to high-field streamlining and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non- degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures.