PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 9: Workshop on Compact Modeling
	PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations
Authors:	C. D’Agostino, P. Flatresse, E. Beigne, M. Belleville
Affilation:	STMicroelectronics, FR
Pages:	620 - 623
Keywords:	statistical, variability, PSP, CMOS
Abstract:	A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of the leakage current of a complete digital circuit, without using time consuming Monte-Carlo simulations. The methodology consists mainly in the integration of probability equations directly into the PSP model
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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