Nano Science and Technology Institute
Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Chapter 9: Workshop on Compact Modeling

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

Authors:C. D’Agostino, P. Flatresse, E. Beigne, M. Belleville
Affilation:STMicroelectronics, FR
Pages:620 - 623
Keywords:statistical, variability, PSP, CMOS
Abstract:A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of the leakage current of a complete digital circuit, without using time consuming Monte-Carlo simulations. The methodology consists mainly in the integration of probability equations directly into the PSP model
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