Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling

Workshop on Compact Modeling Chapter 9

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Authors: G.J. Zhu, X. Zhou, G.H. See, S.H. Lin, C.Q. Wei, J.B. Zhang

Affilation: Nanyang Technological University, Singapore

Pages: 588 - 591

Keywords: unified compact model, FinFET, silicon nanowire, Gummel symmetry

Abstract:
A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact model is validated with experiment data including the first ever higher order derivatives of drain current for non-classical MOSFETs.

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

ISBN: 978-1-4398-1784-1
Pages: 694
Hardcopy: $179.95