Authors: G.J. Zhu, X. Zhou, G.H. See, S.H. Lin, C.Q. Wei, J.B. Zhang
Affilation: Nanyang Technological University, Singapore
Pages: 588 - 591
Keywords: unified compact model, FinFET, silicon nanowire, Gummel symmetry
A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact model is validated with experiment data including the first ever higher order derivatives of drain current for non-classical MOSFETs.