A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 9: Workshop on Compact Modeling
	A Unified Compact model for FinFET and Silicon Nanowire MOSFETs
Authors:	G.J. Zhu, X. Zhou, G.H. See, S.H. Lin, C.Q. Wei, J.B. Zhang
Affilation:	Nanyang Technological University, SG
Pages:	588 - 591
Keywords:	unified compact model, FinFET, silicon nanowire, Gummel symmetry
Abstract:	A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact model is validated with experiment data including the first ever higher order derivatives of drain current for non-classical MOSFETs.
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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