Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling

Workshop on Compact Modeling Chapter 9

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Authors: U. Monga, T.A. Fjeldly

Affilation: Norwegian University of Science and Technology, Norway

Pages: 580 - 583

Keywords: quantum effects, device modeling, nanoscale MOSFET, double-gate device, conformal mapping

Abstract:
A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge can be neglected in Poisson’s equation, thus decoupling the quantum effects and the electrostatics in the body. The potential in subthreshold is obtained as a solution of the 2-D Laplace equation with the help of conformal mapping techniques


ISBN: 978-1-4398-1784-1
Pages: 694
Hardcopy: $179.95

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