Nano Science and Technology Institute
Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Chapter 9: Workshop on Compact Modeling

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Authors:U. Monga, T.A. Fjeldly
Affilation:Norwegian University of Science and Technology, NO
Pages:580 - 583
Keywords:quantum effects, device modeling, nanoscale MOSFET, double-gate device, conformal mapping
Abstract:A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge can be neglected in Poisson’s equation, thus decoupling the quantum effects and the electrostatics in the body. The potential in subthreshold is obtained as a solution of the 2-D Laplace equation with the help of conformal mapping techniques
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